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512 36/1m 18 flow-thru sram cy7c1381b cy7c1383b cypress semiconductor corporation ? 3901 north first street san jose ca 95134 408-943-2600 document #: 38-05196 rev. ** revised december 3, 2001 381b features fast access times: 7.5, 8.5, 10.0 ns fast clock speed: 117, 100, 83 mhz provide high-performance 3-1-1-1 access rate optimal for depth expansion 3.3v ( ? 5% / +10%) power supply common data inputs and data outputs byte write enable and global write control chip enable for address pipeline address, data and control registers internally self-timed write cycle burst control pins (interleaved or linear burst sequence) automatic power down available using zz mode or ce deselect high-density, high-speed packages jtag boundary scan for bga packaging version functional description the cypress synchronous burst sram family employs high-speed, low power cmos designs using advanced single-layer polysilicon, triple-layer metal technology. each memory cell consists of six transistors. the cy7c1381b and cy7c1383b srams integrate 524,288 36 and 1,048,576 18 sram cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. all synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (clk). the synchronous inputs include all addresses, all data inputs, address-pipelining chip enable (ce ), burst control inputs (adsc , adsp , and adv ), write enables (bw a, bw b, bw c, bw d, and bw e), and global write (gw ). asynchronous inputs include the output enable (oe ) and burst mode control (mode). the data outputs (q), enabled by oe , are also asynchronous. addresses and chip enables are registered with either address status processor (adsp ) or address status controller (adsc ) input pins. subsequent burst addresses can be inter- nally generated as controlled by the burst advance pin (adv ). address, data inputs, and write controls are registered on-chip to initiate self-timed write cycle. write cycles can be one to four bytes wide as controlled by the write control inputs. individual byte write allows individual byte to be written. bw a controls dq1-dq8 and dp1. bw b controls dq9-dq16 and dp2. bw c controls dq17-dq24and dp3. bw d controls dq25-dq32 and dp4. bw a, bw b bw c, and bw d can be active only with bw e being low. gw being low causes all bytes to be written. write pass-through capability allows written data available at the output for the immediately next read cycle. this device also incorporates pipelined enable circuit for easy depth expansion without penalizing system performance. all inputs and outputs of the cy7c1381b and the cy7c1383b are jedec-standard jesd8-5-compatible. selection guide 117 mhz 100 mhz 83 mhz unit maximum access time 7.5 8.5 10.0 ns maximum operating current 250 225 185 ma maximum cmos standby current 20 20 20 ma
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 2 of 31 functional block diagram clk adv adsc a [19:0] gw bwe bws a ce 1 ce 3 ce 2 oe zz burst counter dqb[15:8],dp1 bytewrite registers address register d q input registers 1m 18 memory array clk q 0 q 1 q d ce ce clr sleep control dqa[7:0],dp0 bytewrite registers d q enable register d q ce clk 18 18 20 18 18 20 (a 0 ,a 1 ) 2 mode adsp logic block diagram 18 dq [15:0] bws b dp [1:0] clk adv adsc a [18:0] gw bwe bws a ce 1 ce 3 ce 2 oe zz burst counter dqd[31:24],dp3 bytewrite registers address register d q input registers 512k 36 memory array clk q 0 q 1 q d ce ce clr sleep control dqc[23:16],dp2 bytewrite registers d q d q dqb[15:8],dp1 bytewrite registers dqa[7:0],dp0 bytewrite registers d q enable register d q ce clk 36 36 19 17 17 19 (a 0 ,a 1 ) 2 mode adsp logic block diagram 36 dq [31:0] bws b bws c bws d dp [3:0]
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 3 of 31 pin configurations a a a a a1 a0 nc nc vss vdd a a a a a a a a a dpb dqb dqb vddq vssq dqb dqb dqb dqb vssq vddq dqb dqb vss nc vdd zz dqa dqa vddq vssq dqa dqa dqa dqa vssq vddq dqa dqa dpa dpc dqc dqc vddq vssq dqc dqc dqc dqc vssq vddq dqc dqc vdd nc vss dqd dqd vddq vssq dqd dqd dqd dqd vssq vddq dqd dqd dpd a a ce1 ce2 bwd bwc bwb bwa ce3 vdd vss clk gw bwe oe adsc adsp adv a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 mode cy7c1381b (512k 36) nc a a a a a1 a0 nc nc vss vdd a a a a a a a a a a nc nc vddq vssq nc dpa dqa dqa vssq vddq dqa dqa vss nc vdd zz dqa dqa vddq vssq dqa dqa nc nc vssq vddq nc nc nc nc nc nc vddq vssq nc nc dqb dqb vssq vddq dqb dqb vdd nc vss dqb dqb vddq vssq dqb dqb dpb nc vssq vddq nc nc nc a a ce1 ce2 nc nc bwb bwa ce3 vdd vss clk gw bwe oe adsc adsp adv a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 mode cy7c1383b (1m 18) nc 100-pin tqfp
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 4 of 31 pin configurations (continued) 2 34567 1 a b c d e f g h j k l m n p r t u v ddq nc nc dqp c dq c dq d dq c dq d aa aa adsp v ddq aa dq c v ddq dq c v ddq v ddq v ddq dq d dq d nc nc v ddq v dd clk v dd v ss v ss v ss v ss v ss v ss v ss v ss nc nc nc nc tdo tck tdi tms 32m 64m nc v ddq v ddq v ddq aaa a a a a a a a a0 a1 dq a dq c dq a dq a dq a dq b dq b dq b dq b dq b dq b dq b dq a dq a dq a dq a dq b v dd dq c dq c dq c v dd dq d dq d dq d dq d adsc nc ce 1 oe adv gw v ss v ss v ss v ss v ss v ss v ss v ss dqp a mode dqp d dqp b bw b bw c nc v dd nc bw a nc bwe bw d zz 2 34567 1 a b c d e f g h j k l m n p r t u v ddq nc nc nc dq b dq b dq b dq b aa aa adsp v ddq aa nc v ddq nc v ddq v ddq v ddq nc nc nc 64m v ddq v dd clk v dd v ss v ss v ss v ss v ss v ss v ss v ss nc nc nc nc tdo tck tdi tms a a nc v ddq v ddq v ddq a32ma a a a a a a a a a0 a1 dq a dq b nc nc dq a nc dq a dq a nc nc dq a nc dq a nc dq a nc dq b v dd nc dq b nc v dd dq b nc dq b nc adsc nc ce 1 oe adv gw v ss v ss v ss v ss v ss v ss v ss v ss nc mode dqp b dqp a v ss bw b nc v dd nc bw a nc bwe v ss zz cy7c1383b (1m 18) cy7c1381b (512k 36) a 119-ball bga
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 5 of 31 pin configurations (continued) cy7c1381b (512k 36) ? 11 15 fbga 165-ball bump fbga cy7c1383b (1m 18) ? 11 15 fbga 234567 1 a b c d e f g h j k l m n p r tdo nc nc nc nc dpb nc dqb ace 1 nc ce 3 bw bbwe ace 2 nc dqb dqb mode nc dqb dqb nc nc nc 32m 64m v ddq nc bw aclk gw v ss v ss v ss v ss v ddq v ss v dd v ss v ss v ss a v ss v ss v ss v ss v ddq v ddq nc v ddq v ddq v ddq v ddq a a v dd v ss v dd v ss v ss v ddq v dd v ss v dd v ss v dd v ss v ss v ss v dd v dd v ss v dd v ss v ss nc tck a0 v ss atdi atms dqb v ss nc v ss dqb nc v ss v ss v ss v ss v ss nc v ss a1 dqb nc nc nc v ddq v ss 891011 a adv a adsc a oe adsp a 128m v ss v ddq nc dpa v ddq v dd nc dqa dqa nc nc nc dqa nc v dd v ddq v dd v ddq dqa v dd nc v dd nc v dd v ddq dqa v ddq v dd v dd v ddq v dd v ddq nc v ddq a a v ss aa aa dqa nc nc zz dqa nc nc dqa a v ddq 234567 1 a b c d e f g h j k l m n p r tdo nc nc dpc dqc dpd nc dqd ace 1 bw bce 3 bw cbwe ace 2 dqc dqd dqd mode nc dqc dqc dqd dqd dqd 32m 64m v ddq bw dbw aclk gw v ss v ss v ss v ss v ddq v ss v dd v ss v ss v ss a v ss v ss v ss v ss v ddq v ddq nc v ddq v ddq v ddq v ddq a a v dd v ss v dd v ss v ss v ddq v dd v ss v dd v ss v dd v ss v ss v ss v dd v dd v ss v dd v ss v ss nc tck a0 v ss atdi atms dqc v ss dqc v ss dqc dqc v ss v ss v ss v ss v ss nc v ss a1 dqd dqd nc nc v ddq v ss 891011 a adv a adsc nc oe adsp a128m v ss v ddq nc dpb v ddq v dd dqb dqb dqb nc dqb nc dqa dqa v dd v ddq v dd v ddq dqb v dd nc v dd dqa v dd v ddq dqa v ddq v dd v dd v ddq v dd v ddq dqa v ddq a a v ss aa aa dqb dqb dqb zz dqa dqa dpa dqa a v ddq
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 6 of 31 pin definitions name i/o description a0 a1 a input- synchronous address inputs used to select one of the address locations . sampled at the rising edge of the clk if adsp or adsc is active low, and ce 1 , ce 2 , and ce 3 are sampled active. a [1:0] feed the two-bit counter. bw a bw b bw c bw d input- synchronous byte write select inputs, active low . qualified with bwe to conduct byte writes to the sram. sampled on the rising edge of clk. gw input- synchronous global write enable input, active low . when asserted low on the rising edge of clk, a global write is conducted (all bytes are written, regardless of the values on bw a,b,c,d and bwe ). bwe input- synchronous byte write enable input, active low . sampled on the rising edge of clk. this signal must be asserted low to conduct a byte write. clk input-clock clock input . used to capture all synchronous inputs to the device. also used to increment the burst counter when adv is asserted low, during a burst operation. ce 1 input- synchronous chip enable 1 input, active low . sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select/deselect the device. adsp is ignored if ce 1 is high. ce 2 input- synchronous chip enable 2 input, active high . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select/deselect the device (tqfp only). ce 3 input- synchronous chip enable 3 input, active low . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select/deselect the device (tqfp only) . oe input- asynchronous output enable, asynchronous input, active low . controls the direction of the i/o pins. when low, the i/o pins behave as outputs. when deasserted high, i/o pins are three-stated, and act as input data pins. oe is masked during the first clock of a read cycle when emerging from a deselected state. adv input- synchronous advance input signal, sampled on the rising edge of clk . when asserted, it automatically increments the address in a burst cycle. adsp input- synchronous address strobe from processor, sampled on the rising edge of clk . when asserted low, a is captured in the address registers. a [1:0] are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized. asdp is ignored when ce 1 is deasserted high. adsc input- synchronous address strobe from controller, sampled on the rising edge of clk . when asserted low, a [x:0] is captured in the address registers. a [1:0] are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized. mode input- static selects burst order . when tied to gnd selects linear burst sequence. when tied to v ddq or left floating selects interleaved burst sequence. this is a strap pin and should remain static during device operation. zz input- asynchronous zz ? sleep ? input . this active high input places the device in a non-time-critical ? sleep ? condition with data integrity preserved. dqa, dpa dqb, dpb dqc, dpc dqd, dpd i/o- synchronous bidirectional data i/o lines . as inputs, they feed into an on-chip data register that is triggered by the rising edge of clk. as outputs, they deliver the data contained in the memory location specified by a [x] during the previous clock rise of the read cycle. the direction of the pins is controlled by oe . when oe is asserted low, the pins behave as outputs. when high, dqa ? dqd and dpa ? dpd are placed in a three-state condition. dq a,b,c and d are eight-bits wide. dp a,b,c and d are one-bit wide. tdo jtag serial output synchronous serial data-out to the jtag circuit . delivers data on the negative edge of tck (bga only). tdi jtag serial input synchronous serial data-in to the jtag circuit . sampled on the rising edge of tck (bga only).
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 7 of 31 tms tes t m o de s el e ct synchronous this pin controls the test access port (tap) state machine. sampled on the rising edge of tck (bga only). tck jtag serial clock serial clock to the jtag circuit (bga only). v dd power supply power supply inputs to the core of the device . should be connected to 3.3v ? 5% +10% power supply. v ss ground ground for the core of the device . should be connected to ground of the system. v ddq i/o power supply power supply for the i/o circuitry. v ssq i/o ground ground for the i/o circuitry . should be connected to ground of the system. nc ? no connects . pins are not internally connected. 32m 64m 128m ? no connects . reserved for address expansion. pins are not internally connected. pin definitions (continued) name i/o description
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 8 of 31 functional description single read accesses this access is initiated when the following conditions are satisfied at clock rise: (1) adsp or adsc is asserted low, and (2) chip enable (ce 1 , ce 2 , ce 3 on tqfp, ce 1 on bga) is asserted active, and (3) the write signals (gw , bwe ) are all deasserted high. adsp is ignored if ce 1 is high. the address presented to the address inputs is stored into the address advancement logic and the address register while being presented to the memory core. if the oe input is asserted low, the requested data will be available at the data outputs a maximum to t cdv after clock rise. adsp is ignored if ce 1 is high. single write accesses initiated by adsp this access is initiated when both of the following conditions are satisfied at clock rise: (1) adsp is asserted low, and (2) chip enable is asserted active. the address presented is loaded into the address register and the address advancement logic while being delivered to the ram core. the write signals (gw , bwe , and bw x) and adv inputs are ignored during this first clock cycle. if the write inputs are asserted active (see write cycle descriptions table on page 10 for appropriate states that indicate a write) on the next clock rise, the appropriate data will be latched and written into the device. the cy7c1381b/cy7c1383b provides byte write capability that is described in the write cycle description table. asserting the byte write enable (bwe ) input with the selected byte write (bw a,b,c,d for cy7c1381b and bw a,b for cy7c1383b) input will selectively write to only the desired bytes. bytes not selected during a byte write operation will remain unaltered. all i/os are three-stated during a byte write. because the cy7c1381b/cy7c1383b is a common i/o device, the oe must be deasserted high before presenting data to the dqx inputs. doing so will three-state the output drivers. as a safety precaution, dqx are automatically three-stated whenever a write cycle is detected, regardless of the state of oe . single write accesses initiated by adsc adsc write accesses are initiated when the following condi- tions are satisfied: (1) adsc is asserted low, (2) adsp is deasserted high, (3) chip enable (ce 1 , ce 2 , ce 3 on tqfp, ce 1 on bga) is asserted active, and (4) the appropriate combination of the write inputs (gw , bwe , and bw x ) is asserted active to conduct a write to the desired byte(s). adsc is ignored if adsp is active low. the address presented to a [17:0] is loaded into the address register and the address advancement logic while being delivered to the ram core. the adv input is ignored during this cycle. if a global write is conducted, the data presented to the dqx is written into the corresponding address location in the ram core. if a byte write is conducted, only the selected bytes are written. bytes not selected during a byte write operation will remain unaltered. all i/os are three-stated during a byte write because the cy7c1381b/cy7c1383b is a common i/o device, the oe must be deasserted high before presenting data to the dqx inputs. doing so will three-state the output drivers. as a safety precaution, dqx are automatically three-stated whenever a write cycle is detected, regardless of the state of oe . burst sequences the cy7c1381b/cy7c1383b provides a two-bit wraparound counter fed by a [1:0] that implements either an interleaved or linear burst sequence to support processors that follow a linear burst sequence. the burst sequence is user-selectable through mode input. asserting adv low at clock rise will automatically increment the burst counter to the next address in the burst sequence. both read and write burst operations are supported. sleep mode the zz input pin is an asynchronous input. asserting zz high places the sram in a power conservation ? sleep ? mode. two clock cycles are required to enter into or exit from this ? sleep ? mode. while in this mode, data integrity is guaranteed. accesses pending when entering the ? sleep ? mode are not considered valid nor is the completion of the operation guaranteed. the device must be deselected prior to entering the ? sleep ? mode. chip enable (ce 1 , ce 2 , ce 3 , on tqfp, ce 1 on bga), adsp and adsc must remain inactive for the duration of t zzrec after the zz input returns low. leaving zz unconnected defaults the device into an active state. interleaved burst sequence first address second address third address fourth address a [1:0] a [1:0] a [1:0] a [1:0] 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 linear burst sequence first address second address third address fourth address a [1:0] a [1:0] a [1:0] a [1:0] 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 9 of 31 zz mode electrical characteristics parameter description test conditions min. max. unit i cczz sleep mode standby current zz < v dd ? 0.2v 20 ma t zzs device operation to zz zz < v dd ? 0.2v 2t cyc ns t zzrec zz recovery time zz 0.2v 2t cyc ns cycle descriptions [1, 2, 3] next cycle add. used zz ce 3 ce 2 ce 1 adsp adsc adv oe dq write unselected none 0 x x 1 x 0 x x hi-z x unselected none 0 1 x 0 0 x x x hi-z x unselected none 0 x 0 0 0 x x x hi-z x unselected none 0 1 x 0 1 0 x x hi-z x unselected none 0 x 0 0 1 0 x x hi-z x begin readexternal 0010 0 x xxhi-zx begin readexternal 0010 1 0 xxhi-zread continue read next 0 x x x 1 1 0 1 hi-z read continue read next 0 x x x 1 1 0 0 dq read continue read next 0 x x 1 x 1 0 1 hi-z read continue read next 0 x x 1 x 1 0 0 dq read suspend read current 0 x x x 1 1 1 1 hi-z read suspend read current 0 x x x 1 1 1 0 dq read suspend read current 0 x x 1 x 1 1 1 hi-z read suspend read current 0 x x 1 x 1 1 0 dq read begin write current 0 x x x 1 1 1 x hi-z write begin write current 0 x x 1 x 1 1 x hi-z write begin writeexternal 0010 1 0 xxhi-zwrite continue write next 0 x x x 1 1 0 x hi-z write continue write next 0 x x 1 x 1 0 x hi-z write suspend write current 0 x x x 1 1 1 x hi-z write suspend write current 0 x x 1 x 1 1 x hi-z write zz ? sleep ? none 1 x x x x x x x hi-z x note: 1. x = ? don't care ? , 1 = high, 0 = low. 2. the sram always initiates a read cycle when adsp asserted, regardless of the state of gw , bwe , or bw x . writes may occur only on subsequent clocks after the adsp or with the assertion of adsc . as a result, oe must be driven high prior to the start of the write cycle to allow the outputs to three-state. oe is a ? don't care ? for the remainder of the write cycle. 3. oe is asynchronous and is not sampled with the clock rise. it is masked internally during write cycles. during a read cycle, dq = high-z when oe is inactive or when the device is deselected, and dq = data when oe is active.
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 10 of 31 write cycle description [1, 2, 3] function (cy7c1381b) gw bwe bw dbw cbw bbw a read 1 1xxxx read 101111 write byte 0 ? dqa 101110 write byte 1 ? dqb 101101 write bytes 1, 0 101100 write byte 2 ? dqc 101011 write bytes 2, 0 101010 write bytes 2, 1 101001 write bytes 2, 1, 0 1 0 1 0 0 0 write byte 3 ? dqd 100111 write bytes 3, 0 100110 write bytes 3, 1 100101 write bytes 3, 1, 0 1 0 0 1 0 0 write bytes 3, 2 100011 write bytes 3, 2, 0 1 0 0 0 1 0 write bytes 3, 2, 1 1 0 0 0 0 1 write all bytes 1 0 0 0 0 0 write all bytes 0 x x x x x function (cy7c1383b) gw bwe bw bbw a read 1 1 x x read 1 0 1 1 write byte 0 ? dqa and dpa 1 0 1 0 write byte 1 ? dqb and dpb 1 0 0 1 write all bytes 1 0 0 0 write all bytes 0 x x x
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 11 of 31 ieee 1149.1 serial boundary scan (jtag) the cy7c1381b/cy7c1383b incorporates a serial boundary scan tap in the fbga package only. the tqfp package does not offer this functionality. this port operates in accordance with ieee standard 1149.1 ? 1900, but does not have the set of functions required for full 1149.1 compliance. these functions from the ieee specification are excluded because their inclusion places an added delay in the critical speed path of the sram. note that the tap controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant taps. the tap operates using jedec standard 3.3v i/o logic levels. disabling the jtag feature it is possible to operate the sram without using the jtag feature. to disable the tap controller , tck must be tied low (v ss ) to prevent clocking of the device. tdi and tms are inter- nally pulled up and may be unconnected. they may alternately be connected to v dd through a pull-up resistor. tdo should be left unconnected. upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. test access port ? test clock the test clock is used only with the tap controller. all inputs are captured on the rising edge of tck. all outputs are driven from the falling edge of tck. test mode select the tms input is used to give commands to the tap controller and is sampled on the rising edge of tck. it is allowable to leave this pin unconnected if the tap is not used. the pin is pulled up internally, resulting in a logic high level. test data-in (tdi) the tdi pin is used to serially input information into the registers and can be connected to the input of any of the registers. the register between tdi and tdo is chosen by the instruction that is loaded into the tap instruction register. for information on loading the instruction register, see the tap controller state diagram. tdi is internally pulled up and can be unconnected if the tap is unused in an application. tdi is connected to the most significant bit (msb) on any register. test data-out (tdo) the tdo output pin is used to serially clock data-out from the registers. the e output is active depending upon the current state of the tap state machine (see tap controller state diagram). the output changes on the falling edge of tck. tdo is connected to the least significant bit (lsb) of any register. performing a tap reset a reset is performed by forcing tms high (v dd ) for five rising edges of tck. this reset does not affect the operation of the sram and may be performed while the sram is operating. at power-up, the tap is reset internally to ensure that tdo comes up in a high-z state. tap registers registers are connected between the tdi and tdo pins and allow data to be scanned into and out of the sram test circuitry. only one register can be selected at a time through the instruction registers. data is serially loaded into the tdi pin on the rising edge of tck. data is output on the tdo pin on the falling edge of tck. instruction register three-bit instructions can be serially loaded into the instruction register. this register is loaded when it is placed between the tdi and tdo pins as shown in the tap controller block diagram. upon power-up, the instruction register is loaded with the idcode instruction. it is also loaded with the idcode instruction if the controller is placed in a reset state as described in the previous section. when the tap controller is in the captureir state, the two least significant bits are loaded with a binary ? 01" pattern to allow for fault isolation of the board level serial test path. bypass register to save time when serially shifting data through registers, it is sometimes advantageous to skip certain states. the bypass register is a single-bit register that can be placed between tdi and tdo pins. this allows data to be shifted through the sram with minimal delay. the bypass register is set low (v ss ) when the bypass instruction is executed. boundary scan register the boundary scan register is connected to all the input and output pins on the sram. several no connect (nc) pins are also included in the scan register to reserve pins for higher density devices. the 36 configuration has a 70-bit-long register, and the 18 configuration has a 51-bit-long register. the boundary scan register is loaded with the contents of the ram input and output ring when the tap controller is in the capture-dr state and is then placed between the tdi and tdo pins when the controller is moved to the shift-dr state. the extest, sample/preload and sample z instruc- tions can be used to capture the contents of the i/o ring. the boundary scan order tables show the order in which the bits are connected. each bit corresponds to one of the bumps on the sram package. the msb of the register is connected to tdi, and the lsb is connected to tdo. identification (id) register the id register is loaded with a vendor-specific, 32-bit code during the capture-dr state when the idcode command is loaded in the instruction register. the idcode is hardwired into the sram and can be shifted out when the tap controller is in the shift-dr state. the id register has a vendor code and other information described in the identification register definitions table. tap instruction set eight different instructions are possible with the three-bit instruction register. all combinations are listed in the instruction code table. three of these instructions are listed as reserved and should not be used. the other five instruc- tions are described in detail below. the tap controller used in this sram is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. the tap controller cannot be used to load address, data or control signals into the sram and cannot preload the i/o buffers. the sram does
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 12 of 31 not implement the 1149.1 commands extest or intest or the preload portion of sample/preload; rather it performs a capture of the i/o ring when these instructions are executed. instructions are loaded into the tap controller during the shift-ir state when the instruction register is placed between tdi and tdo. during this state, instructions are shifted through the instruction register through the tdi and tdo pins. to execute the instruction once it is shifted in, the tap controller needs to be moved into the update-ir state. extest extest is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. extest is not implemented in the tap controller, and therefore this device is not compliant to the 1149.1 standard. the tap controller does recognize an all-0 instruction. when an extest instruction is loaded into the instruction register, the sram responds as if a sample/preload instruction has been loaded. there is one difference between the two instructions. unlike the sample/preload instruction, extest places the sram outputs in a high-z state. idcode the idcode instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. it also places the instruction register between the tdi and tdo pins and allows the idcode to be shifted out of the device when the tap controller enters the shift-dr state. the idcode instruction is loaded into the instruction register upon power-up or whenever the tap controller is given a test logic reset state. sample z the sample z instruction causes the boundary scan register to be connected between the tdi and tdo pins when the tap controller is in a shift-dr state. it also places all sram outputs into a high-z state. sample/preload sample/preload is a 1149.1 mandatory instruction. the preload portion of this instruction is not implemented, so the tap controller is not fully 1149.1 compliant. when the sample/preload instructions loaded into the instruction register and the tap controller in the capture-dr state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. the user must be aware that the tap controller clock can only operate at a frequency up to 10 mhz, while the sram clock operates more than an order of magnitude faster. because there is a large difference in the clock frequencies, it is possible that during the capture-dr state, an input or output will undergo a transition. the tap may then try to capture a signal while in transition (metastable state). this will not harm the device, but there is no guarantee as to the value that will be captured. repeatable results may not be possible. to guarantee that the boundary scan register will capture the correct value of a signal, the sram signal must be stabilized long enough to meet the tap controller ? s capture set-up plus hold times (tcs and tch). the sram clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a sample/preload instruction. if this is an issue, it is still possible to capture all other signals and simply ignore the value of the ck and ck captured in the boundary scan register. once the data is captured, it is possible to shift out the data by putting the tap into the shift-dr state. this places the boundary scan register between the tdi and tdo pins. note that since the preload part of the command is not implemented, putting the tap into the update to the update-dr state while performing a sample/preload instruction will have the same effect as the pause-dr command. bypass when the bypass instruction is loaded in the instruction register and the tap is placed in a shift-dr state, the bypass register is placed between the tdi and tdo pins. the advantage of the bypass instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. reserved these instructions are not implemented but are reserved for future use. do not use these instructions.
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 13 of 31 tap controller state diagram test-logic reset test-logic/ idle select dr-scan capture-dr shift-dr exit1-dr pause-dr exit2-dr update-dr select ir-scan capture-dr shift-ir exit1-ir pause-ir exit2-ir update-ir 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 note: 4. note: the 0/1 next to each state represents the value at tms at the rising edge of tck.
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 14 of 31 tap controller block diagram 0 0 1 2 . . 29 30 31 boundary scan register identification register 0 1 2 . . . . x 0 1 2 instruction register bypass register selection circuitry selection circuitry tap controller tdi tdo tck tms tap electrical characteristics over the operating range [5, 6] parameter description test conditions min. max. unit v oh1 output high voltage i oh = ? 4.0 ma 2.4 v v oh2 output high voltage i oh = ? 100 a v dd ? 0.2 v v ol1 output low voltage i ol = 8.0 ma 0.4 v v ol2 output low voltage i ol = 100 a 0.2 v v ih input high voltage 1.7 v dd + 0.3 v v il input low voltage ? 0.5 0.7 v i x input load current gnd v i v ddq ? 5 5 a 5. all voltage referenced to ground. 6. overshoot: v ih (ac) < v dd + 1.5v for t < t tcyc / 2; undershoot: v il (ac) < 0.5v for t < t tcyc /2; power-up: v ih < 2.6v and v dd < 2.4v and v ddq < 1.4v for t < 200 ms.
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 15 of 31 tap ac switching characteristics over the operating range [7, 8] parameters description min. max unit t tcyc tck clock cycle time 100 ns t tf tck clock frequency 10 mhz t th tck clock high 40 ns t tl tck clock low 40 ns set-up times t tmss tms set-up to tck clock rise 10 ns t tdis tdi set-up to tck clock rise 10 ns t cs capture set-up to tck rise 10 ns hold times t tmsh tms hold after tck clock rise 10 ns t tdih tdi hold after clock rise 10 ns t ch capture hold after clock rise 10 ns output times t tdov tck clock low to tdo valid 20 ns t tdox tck clock high to tdo invalid 0 ns notes: 7. t cs and t ch refer to the set-up and hold time requirements of latching data from the boundary scan register. 8. test conditions are specified using the load in tap ac test conditions. tr / tf = 1 ns.
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 16 of 31 tap timing and test conditions (a) tdo c l = 20 pf z 0 = 50 ? gnd 1.25v test clock test mode select tck tms test data-in tdi test data-out tdo t tcyc t tmsh t tl t th t tmss t tdis t tdih t tdov t tdox 50 ? 3.3v 0v all input pulses 1.50v
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 17 of 31 identification register definitions instruction field 512k 36 1m 18 description revision number (31:28) xxxx xxxx reserved for version number. device depth (27:23) 00111 01000 defines depth of sram. 512k or 1m device width (22:18) 00100 00011 defines with of the sram. 36 or 18 cypress device id (17:12) xxxxx xxxxx reserved for future use. cypress jedec id (11:1) 00011100100 00011100100 allows unique identification of sram vendor. id register presence (0) 1 1 indicate the presence of an id register. scan register sizes register name bit size ( 18) bit size ( 36) instruction 3 3 bypass 1 1 id 32 32 boundary scan 51 70 identification codes instruction code description extest 000 captures the i/o ring contents . places the boundary scan register between the tdi and tdo. forces all sram outputs to high-z state. this instruction is not 1149.1-compliant. idcode 001 loads the id register with the vendor id code and places the register between tdi and tdo. this operation does not affect sram operation. sample z 010 captures the i/o contents . places the boundary scan register between tdi and tdo. forces all sram output drivers to a high-z state. reserved 011 do not use . this instruction is reserved for future use. sample/preload 100 captures the i/o ring contents . places the boundary scan register be- tween tdi and tdo. does not affect the sram operation. this instruction does not implement 1149.1 preload function and is therefore not 1149.1-compliant. reserved 101 do not use . this instruction is reserved for future use. reserved 110 do not use . this instruction is reserved for future use. bypass 111 places the bypass register between tdi and tdo . this operation does not affect sram operation.
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 18 of 31 boundary scan order (512k 18) bit # signal name bump id bit # signal name bump id 1 a 2r 36 a 6b 2 a 3t 37 bwa# 5l 3 a 4t 38 bwb# 5g 4 a 5t 39 bwc# 3g 5 a 6r 40 bwd# 3l 6 a 3b 41 a 2b 7 a 5b 42 ce# 4e 8 dqa 6p 43 a 3a 9 dqa 7n 44 a 2a 10 dqa 6m 45 dqc 2d 11 dqa 7l 46 dqc 1e 12 dqa 6k 47 dqc 2f 13 dqa 7p 48 dqc 1g 14 dqa 6n 49 dqc 1d 15 dqa 6l 50 dqc 1d 16 dqa 7k 51 dqc 2e 17 zz 7t 52 dqc 2g 18 dqb 6h 53 dqc 1h 19 dqb 7g 54 nc 5r 20 dqb 6f 55 dqd 2k 21 dqb 7e 56 dqd 1l 22 dqb 6d 57 dqd 2m 23 dqb 7h 58 dqd 1n 24 dqb 6g 59 dqd 2p 25 dqb 6e 60 dqd 1k 26 dqb 7d 61 dqd 2l 27 a 6a 62 dqd 2n 28 a 5a 63 dqd 1p 29 adv# 4g 64 mode 3r 30 adsp# 4a 65 a 2c 31 adsc# 4b 66 a 3c 32 oe# 4f 67 a 5c 33 bwe# 4m 68 a 6c 34 gw# 4h 69 a1 4n 35 clk 4k 70 a0 4p boundary scan order (1m 18) bit # signal name bump id bit # signal name bump id 1 a 2r 36 dqb 2e 2 a 2t 37 dqb 2g 3 a 3t 38 dqb 1h 4 a 5t 39 nc 5r 5 a 6r 40 dqb 2k 6 a 3b 41 dqb 1l 7 a 5b 42 dqb 2m 8 dqa 7p 43 dqb 1n 9 dqa 6n 44 dqb 2p 10 dqa 6l 45 mode 3r 11 dqa 7k 46 a 2c 12 zz 7t 47 a 3c 13 dqa 6h 48 a 5c 14 dqa 7g 49 a 6c 15 dqa 6f 50 a1 4n 16 dqa 7e 51 a0 4p 17 dqa 6d 18 a 6t 19 a 6a 20 a 5a 21 adv# 4g 22 adsp# 4a 23 adsc# 4b 24 oe# 4f 25 bwe# 4m 26 gw# 4h 27 clk 4k 28 a 6b 29 bwa# 5l 30 bwb# 3g 31 a 2b 32 ce# 4e 33 a 3a 34 a 2a 35 dqb 1d
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 19 of 31 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature ..................................... ? 55 c to +150 c ambient temperature with power applied .................................................. ? 55 c to +125 c supply voltage on v dd relative to gnd .........? 0.5v to +4.6v dc voltage applied to outputs in high z state [9] )................................ ? 0.5v to v ddq + 0.5v dc input voltage [9] ..................................? 0.5v to v ddq + 0.5v current into outputs (low) .........................................20 ma static discharge voltage .......................................... >1500v (per mil-std-883, method 3015) latch-up current.................................................... >200 ma operating range range ambient temp [10] v dd v ddq commercial 0 c to +70 c 3.3v ? 5% / +10% 2.5v ? 5% 3.3v + 10% industrial ? 40 c to +85 c electrical characteristics over the operating range parameter description test conditions min. max. unit v dd power supply voltage 3.135 3.63 v v ddq i/o supply voltage 2.375 3.63 v v oh output high voltage v dd = min., i oh = ? 1.0 ma v ddq = 2.5v 2.0 v v dd = min., i oh = ? 4.0 ma v ddq = 3.3v 2.4 v v ol output low voltage v dd = min., i ol = 1.0 ma v ddq = 2.5v 0.4 v v dd = min., i ol = 8.0 ma v ddq = 3.3v 0.4 v v ih input high voltage v ddq = 3.3 v 2 v v ddq = 2.5v 1.7 v v il input low voltage v ddq = 3.3v ? 0.3 0.8 v v ddq = 2.5v ? 0.3 0.7 v i x input load current gnd < v i < v ddq 5 a input current of mode ? 30 30 a input current of zz input = v ss ? 30 30 a i oz output leakage current gnd < v i < v ddq, output disabled 5 a i dd v dd operating supply v dd = max., i out = 0 ma, f = f max = 1/t cyc 8.5-ns cycle, 117 mhz 250 ma 10-ns cycle, 100 mhz 225 ma 12-ns cycle, 83 mhz 185 ma i sb1 automatic ce power-down current ? ttl inputs max. v dd , device deselected, v in > v ih or v in < v il f = f max = 1/t cyc 8.5-ns cycle, 117 mhz 100 ma 10-ns cycle, 100 mhz 90 ma 12-ns cycle, 83 mhz 75 ma i sb2 automatic ce power-down current ? cmos inputs max. v dd , device deselected, v in < 0.3v or v in > v ddq ? 0.3v, f = 0 all speed grades 20 ma i sb3 automatic ce power-down current ? cmos inputs max. v dd , device deselected, or v in < 0.3v or v in > v ddq ? 0.3v f = f max = 1/t cyc 8.5-ns cycle, 117 mhz 90 ma 10-ns cycle, 100 mhz 75 ma 12-ns cycle, 83 mhz 60 ma i sb4 automatic cs power-down current ? ttl inputs max. v dd , device deselected, v in > v ih or v in < v il , f = 0 all speeds 50 ma notes: 9. minimum voltage equals -2.0v for pulse duration of less than 20ns. 10. t a is the case temperature.
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 20 of 31 capacitance [11] parameter description test conditions max. unit c in input capacitance t a = 25 c, f = 1 mhz, v dd = 3.3v, v ddq = 3.3v 3 pf c clk clock input capacitance 3 pf c i/o input/output capacitance 3 pf ac test loads and waveforms thermal resistance [11] description test conditions q ja (junction to ambient) q jc (junction to case) units 119 bga still air, soldered on a 114.3 101.6 1.57 mm3, 2-layer board 41.54 6.33 c/w 165 fbga 44.51 2.38 c/w 100-pin tqfp still air, soldered on a 4.25 1.125 inch, 4-layer printed circuit board 25 9 c/w notes: 11. tested initially and after any design or process changes that may affect these parameters. 12. input waveform should have a slew rate of 1 v/ns. output r = 1667 ? r = 1538 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? vth = 1.25v v ddq all input pulses [12] v dd gnd 90% 10% 90% 10% < 1v/ns < 1 v/ns (c)
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 21 of 31 switching characteristics over the operating range [13, 14, 15] parameter description ? 117 ? 100 ? 83 unit min. max. min. max. min. max. t cyc clock cycle time 8.5 10.0 12.0 ns t ch clock high 2.3 2.5 3.0 ns t cl clock low 2.3 2.5 3.0 ns t as address set-up before clk rise 1.5 1.5 1.5 ns t ah address hold after clk rise 0.5 0.5 0.5 ns t co data output valid after clk rise 7.5 8.5 10.0 ns t doh data output hold after clk rise 1.5 1.5 1.5 ns t ads adsp , adsc set-up before clk rise 1.5 1.5 1.5 ns t adh adsp , adsc hold after clk rise 0.5 0.5 0.5 ns t wes bwe , gw , bw x set-up before clk rise 1.5 1.5 1.5 ns t weh bwe , gw , bw x hold after clk rise 0.5 0.5 0.5 ns t advs adv set-up before clk rise 1.5 1.5 1.5 ns t advh adv hold after clk rise 0.5 0.5 0.5 ns t ds data input set-up before clk rise 1.5 1.5 1.5 ns t dh data input hold after clk rise 0.5 0.5 0.5 ns t ces chip enable set-up 1.5 1.5 1.5 ns t ceh chip enable hold after clk rise 0.5 0.5 0.5 ns t chz clock to high-z [13] 3.0 3.0 3.0 ns t clz clock to low-z [13] 1.3 1.3 1.3 ns t eohz oe high to output high-z [13, 14] 4.0 4.0 4.0 ns t eolz oe low to output low-z [13, 14] 0 0 0 ns t eov oe low to output valid [13] 3.4 3.8 4.2 ns notes: 13. unless otherwise noted, test conditions assume signal transition time of 2.5 ns or less, timing reference levels of 1.25v, i nput pulse levels of 0 to 2.5v, and output loading of the specified i ol /i oh and load capacitance. shown in (a), (b) and (c) of ac test loads. 14. t chz , t clz , t oev , t eolz , and t eohz are specified with a load capacitance of 5 pf as in part (b) of ac test loads. transition is measured 200 mv from steady-state voltage. 15. at any given voltage and temperature, t eohz is less than t eolz and t chz is less than t clz .
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 22 of 31 1 switching waveforms write cycle timing [16, 17] notes: 16. we is the combination of bwe , bw x, and gw to define a write cycle (see write cycle descriptions table). 17. wdx stands for write data to address x. adsp clk adsc adv add ce 1 oe gw bwe ce 2 ce 3 1a data-in t cyc t ch t cl t ads t adh t ads t adh t advs t advh wd1 wd2 wd3 t ah t as t ws t wh t wh t ws t ces t ceh t ces t ceh t ces t ceh 2b 3a 1a single write burst write unselected adsp ignored with ce 1 inactive ce 1 masks adsp don ? t care = undefined pipelined write 2a 2c 2d t dh t ds high-z high-z unselected with ce 2 adv must be inactive for adsp write adsc initiated write
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 23 of 31 read cycle timing [16, 18] note: 18. rdx stands for read data from address x. switching waveforms (continued) adsp clk adsc adv add ce 1 oe gw bwe ce 2 ce 3 2a 2c 1a data out t cyc t ch t cl t ads t adh t ads t adh t advs t advh rd1 rd2 rd3 t ah t as t ws t wh t wh t ws t ces t ceh t ces t ceh t ces t ceh t cdv t eov 2b 2c 2d 3a 1a t oehz t doh t clz t chz single read burst read unselected adsp ignored with ce 1 inactive suspend burst ce 1 masks adsp = don ? t care = undefined pipelined read adsc initiated read unselected with ce 2
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 24 of 31 read/write cycle timing [16, 17, 18] switching waveforms (continued) in/out a t ah t as = don ? t care = undefined we is the combination of bwe , bw x, and gw to define a write cycle (see write cycle description table). tclz tchz ce is the combination of ce 2 and ce 3 . all chip selects need to be active in order to select the device. rax stands for read address x, wax stands for write address x, dx stands for data-in x, tdoh clk add bwe ce 1 data b c d adsp adsc adv ce oe q(a) q(b) q (b+1) q (b+2) q (b+3) q(b) d(c) d (c+1) d (c+2) d (c+3) q(d) t cyc t ch t cl t ads t adh t ads t adh t advh t advs t ceh t ceh t ces t ces t weh t wes t cdv read/write timing device originally deselected adsp ignored with ce 1 high t eohz qx stands for data-out x.
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 25 of 31 notes: 19. device originally deselected. 20. ce is the combination of ce 2 and ce 3 . all chip selects need to be active in order to select the device. switching waveforms (continued) back to back read/write timing [19, 20] t as = don ? t care = undefined t clz t chz t doh clk add bwe ce1 data in/out adsc adsp adv ce oe d(c) t cyc t ch t cl t ads t adh t ceh t ces t weh t wes t cdv adsp ignored with ce 1 high rd1 rd2 rd3 rd4 wd1 wd2 wd3 wd4 1a out 2a out 3a out 4a out 1a in 2a in 3a in 4a in back-to-back reads adsp initiated reads adsc initiated reads back-to-back writes
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 26 of 31 note: 21. i/os are in three-state when exiting zz sleep mode. switching waveforms (continued) oe three-state i/os t eohz t eov t eolz oe switching waveforms adsp clk adsc ce 1 ce 3 low high zz t zzs t zzrec i cc i cc (active) three-state i/os zz mode timing [19, 21] ce 2 i cczz high
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 27 of 31 ordering information speed (mhz) ordering code package name package type operating range 117 cy7c1381b-117ac cy7c1383b-117ac a101 100-lead thin quad flat pack commercial cy7c1381b-117bgc cy7c1383b-117bgc bg119 119 bga cy7c1381b-117bzc cy7c1383b-117bzc ba165a 165 fbga 100 cy7c1381b-100ac cy7c1383b-100ac a101 100-lead thin quad flat pack cy7c1381b-100bgc cy7c1383b-100bgc bg119 119 bga cy7c1381b-100bzc cy7c1383b-100bzc ba165a 165 fbga 83 cy7c1381b-83ac cy7c1383b-83ac a101 100-lead thin quad flat pack cy7c1381b-83bgc CY7C1383B-83BGC bg119 119 bga cy7c1381b-83bzc cy7c1383b-83bzc ba165a 165 fbga 100 cy7c1381b-100ai cy7c1383b-100ai a101 100-lead thin quad flat pack industrial cy7c1381b-100bgi cy7c1383b-100bgi bg119 119 bga cy7c1381b-100bzi cy7c1383b-100bzi ba165a 165 fbga 83 cy7c1381b-83ai cy7c1383b-83ai a101 100-lead thin quad flat pack cy7c1381b-83bgi cy7c1383b-83bgi bg119 119 bga cy7c1381b-83bzi cy7c1383b-83bzi ba165a 165 fbga shaded areas contain advance information.
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 28 of 31 pin configurations 100-pin thin plastic quad flatpack (14 20 1.4 mm) a101
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 29 of 31 pin configurations (continued) 119-lead fbga (14 22 2.4 mm) bg119
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 30 of 31 ? cypress semiconductor corporation, 2001. the information contained herein is subject to change without notice. cypress semico nductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress semiconductor product. nor does it convey or imply any license unde r patent or other rights. cypress semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected t o result in significant injury to the user. the inclusion of cypress semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in do i ng so indemnifies cypress semiconductor against all charges. all product and company names mentioned in this document are the trademarks of their respective holders. pin configurations (continued) 165-ball fbga (13 15 1.2 mm) bb165a
cy7c1381b cy7c1383b document #: 38-05196 rev. ** page 31 of 31 revision history document title: cy7c1381b/cy7c1383b 512k x36/1m x18 flow-thru sram document number: 38-05196 rev. ecn no. issue date orig. of change description of change ** 112032 12/09/01 dsg change from spec number: 38-01077 to 38-05196

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